| 摘要 |
<p>A method for manufacturing a pillar pattern is provided to protect stably a pillar pattern and to increase a yield of a semiconductor device by preventing excessive loss of a gate hard mask layer for forming the pillar pattern. An etch process is performed to etch a substrate(31) by using an etch barrier. A pillar head is formed by etching the substrate. A stacked pattern of a gate hard mask layer pattern and an etch protection layer pattern is used as the etch barrier. A sidewall protection layer is formed on a sidewall of the etch protection layer pattern, the gate hard mask layer pattern, and the sidewall of the pillar head. An isotropic etch process is performed to form a pillar neck by etching the substrate.</p> |
