METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to increase a yield of the semiconductor device by improving stability and reliability in a manufacturing process. A pillar pattern including a pillar head(23) and a pillar neck(25) is formed by etching a substrate(21). A gate insulating layer(26) is formed on an upper part of the pillar pattern. A first metal layer(27) and a second metal layer are formed along a stepped part of the substrate on which the gate insulating layer. A part of the second metal layer is selectively etched by using the first metal layer as an etch stop layer. A second metal layer pattern for surrounding the pillar neck is formed by etching selectively the part of the second metal layer. A first metal layer pattern for surrounding the pillar neck is formed by etching a part of the first metal layer.