发明名称 METHOD FOR FABRICATING CAPACITOR
摘要 A method for manufacturing a capacitor is provided to enhance stability and reliability of a semiconductor device by preventing a leaning effect of a lower electrode. A sacrificial layer pattern is formed on an upper surface of a substrate(11). The sacrificial layer includes a plurality of opening areas. A lower electrode(17A) is formed in the inside of the opening areas. A magnetic field attraction inducing layer pattern(19A) is formed on an upper area of the lower electrode. The sacrificial layer pattern is removed by applying the magnetic field to a substrate direction on the upper surface of the substrate.
申请公布号 KR20090067471(A) 申请公布日期 2009.06.25
申请号 KR20070135147 申请日期 2007.12.21
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIL, DEOK SIN;LEE, KEE JEUNG;KIM, YOUNG DAE;KIM, JIN HYOCK;DO, KWAN WOO;PARK, KYUNG WOONG
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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