A method for manufacturing a capacitor is provided to enhance stability and reliability of a semiconductor device by preventing a leaning effect of a lower electrode. A sacrificial layer pattern is formed on an upper surface of a substrate(11). The sacrificial layer includes a plurality of opening areas. A lower electrode(17A) is formed in the inside of the opening areas. A magnetic field attraction inducing layer pattern(19A) is formed on an upper area of the lower electrode. The sacrificial layer pattern is removed by applying the magnetic field to a substrate direction on the upper surface of the substrate.
申请公布号
KR20090067471(A)
申请公布日期
2009.06.25
申请号
KR20070135147
申请日期
2007.12.21
申请人
HYNIX SEMICONDUCTOR INC.
发明人
KIL, DEOK SIN;LEE, KEE JEUNG;KIM, YOUNG DAE;KIM, JIN HYOCK;DO, KWAN WOO;PARK, KYUNG WOONG