发明名称 CAPACITOR AND METHOD FOR FABRICATION OF THE SAME
摘要 A capacitor and a manufacturing method are provided to reduce the size of the leakage current while minimizing the equivalent oxide thickness of the dielectric layer. A capacitor comprises a bottom electrode(11), a dielectric layer(12), and a upper electrode(13). A bottom electrode is arranged in the bottom side of capacitor. The dielectric layer is arranged on the bottom electrode. The dielectric layer has the equivalent oxide thickness less than 8Å. The dielectric layer has impurity ions suppressing the transition of the electronics of the bottom electrode. The impurity ion forms a trap site in the dielectric layer. A upper electrode is arranged on the dielectric layer. In order to form capacitor the manufacturing method of capacitor is performed by using the bottom electrode, the dielectric layer, and the upper electrode.
申请公布号 KR20090067368(A) 申请公布日期 2009.06.25
申请号 KR20070135007 申请日期 2007.12.21
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SONG, HAN SANG
分类号 H01L27/105 主分类号 H01L27/105
代理机构 代理人
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