| 摘要 |
A manufacturing method of a semiconductor device is provided to improve the electrical characteristic of the MIM capacitor by preventing a production of voids in the bottom electrode and between diffusion barriers. A manufacturing method of the semiconductor device comprises a formation step(402) of a damascene patterns, a formation step(404) of filling patterns, a formation step(406) of the diffusion barrier, and a formation step(408, 410, 412) of the metal wiring structure. In a damascene pattern formation step, the damascene process is performed to in the inter-layer insulating film in order to form the damascene patterns on the inter-layer insulating film. The inter-layer insulating film is formed on the top of the substrate. The formation step of the filling patterns performed to form the bottom electrode and down metal wiring on damascene patterns. The bottom electrode and down metal wiring comprise copper and metallic ions. Metal is copper and other material. The formation step of the diffusion barrier is performed in order to form the diffusion barrier on the bottom electrode and down metal wiring. The diffusion barrier is formed on the inter-layer insulating film in order to cover the bottom electrode and down metal wiring. The formation step of the metal wiring structure is performed in order to form the metal wiring structure on the diffusion barrier. The metal wiring structure electrically connects through the diffusion barrier with the bottom electrode and down metal wiring.
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