| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of performing stable fundamental lateral-mode oscillation while saturation of light emission efficiency in a high-output operation state is suppressed. <P>SOLUTION: The semiconductor laser device includes a first conductivity type clad layer, an active layer, and a second conductivity type clad layer formed on a substrate, and also has a stripe structure for injecting a carrier. Denoting the resonator length of the semiconductor laser as L, the reflection factor of a front end surface as Rf, and the reflection factor of a rear end surface as Rr, Rf<Rr is satisfied and when L1 indicates the position represented by L×Log<SB>e</SB>(Rf)/Log<SB>e</SB>(Rf×Rr) from the front end surface, the ridge width on the rear end surface side is constant after the width of a stripe becomes linearly narrower from the distance L1 to a distance of ≤200 μm in a resonator direction. <P>COPYRIGHT: (C)2009,JPO&INPIT |
