| 摘要 |
Provided is a method of fabricating a Schottky barrier transistor. The method includes (a) forming a pair of cavities for forming a source forming portion and a drain forming portion having a predetermined depth and parallel to each other and a channel forming portion having a fin shape between the cavities in a substrate; (b) filling the pair of cavities with a metal; (c) forming a channel, a source, and a drain by patterning the channel forming portion, the source forming portion, and the drain forming portion in a direction perpendicular to a lengthwise direction of the channel forming portion; (d) sequentially forming a gate oxide layer and a gate metal layer that cover the channel, the source, and the drain on the substrate; and (e) forming a gate electrode corresponding to the channel by patterning the gate metal layer, wherein one of the operations (b) through (e) further comprises forming a Schottky barrier by annealing the substrate.
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