| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bonding wire principally comprising copper that enhances bondability in addition to conventional basic performance. <P>SOLUTION: A bonding wire for semiconductor device has a core material principally comprising copper, and an outer layer provided on the core material and comprising an oxidation resistant metal having a thickness of 20-150 nm, wherein the 0.2% yield strength is 0.07-0.14 mN/μm<SP>2</SP>, the maximum yield strength is 0.20-0.28 mN/μm<SP>2</SP>, the elongation ε per unit cross-section is between ε1 and ε2, and the ε1 and ε2 can be expressed as follows; ε1=(-0.001×R+0.055) and ε2=(-0.001×R+0.068), assuming R is the diameter of the wire. <P>COPYRIGHT: (C)2009,JPO&INPIT |
