| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve such a problem that a conventional manufacturing method for a semiconductor device cannot reduce damage caused by imprints performed to the semiconductor device, while suppressing the deterioration of the imprints. <P>SOLUTION: In a manufacturing method of a semiconductor device 100, after forming a protecting film 31, energy rays are so irradiated on an imprint film 21 by transmitting the energy rays through the protecting film 31 as to reform the material of the imprint film 21 and as to form imprints. According to such a manufacturing method of the semiconductor device 100, an imprinted region, i.e., the top surface of the imprint film 21 is so covered with the protecting film 31 as to be able to reduce the damage of a semiconductor chip 11 which is caused by dust, heat generation, gas, stress or the like generated when performing the imprints. Thereby, the manufacturing method of the semiconductor device 100 which forms the excellent imprints can be obtained. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
