| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which increases margin reducing a random pattern, and secures withstanding voltage, even when microfabrication advances. SOLUTION: The semiconductor integrated circuit device includes: a memory cell array 11; a sense circuit 12; a first hook up region F1 equipped with at least a first transfer transistor TF1-1 in which one end of a current path is connected to the sense circuit and another end is electrically connected to one first bit wire among a plurality of bit wires and a second transfer transistor TF1-2 in which one end of the current path is connected to the sense circuit and another end is electrically connected to one second bit wire among a plurality of bit wires; and a second hook up region F2 being arranged between the memory cell array and the first hook up region, equipped with at least a third transfer transistor TF2-1, in which one end of the current path is electrically connected to the first bit wire and another end is electrically connected to the one end of the current path of the first transfer transistor. COPYRIGHT: (C)2009,JPO&INPIT
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