发明名称 HEATER FOR GASEOUS PHASE GROWING DEVICE
摘要 PROBLEM TO BE SOLVED: To inexpensively provide a heater for a gaseous phase growing device endurable against the long service life of 6 months to 2 years at the working temperature of 1400°C-1700°C, by improving a gas resistant characteristic to atmospheric gas, for example, an ammonia NH<SB>3</SB>, oxygen O<SB>2</SB>or moisture H<SB>2</SB>O. SOLUTION: The heater service life can be extended by two years or more at the working temperature around 1400°C, by successively laminating pyrolytic boron nitride (PBN) 20 in the thickness of 50μm-100μm as a first layer, pyrolytic graphite (PG) 30 in the thickness of 10μm-50μm as a second layer and silicon carbide SiC 40 in the thickness of 50μm-100μm as a third layer (the uppermost layer), as a protective coating film, on an outside surface of a heat body part 10 also serving as a base body composed of graphite. Interlayer separation between the laminated coating films is hardly caused even if quick heating of 10°C/sec is performed. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009141158(A) 申请公布日期 2009.06.25
申请号 JP20070316478 申请日期 2007.12.07
申请人 NARUO NOBORU 发明人 NARUO NOBORU
分类号 H01L21/205;C23C16/34;C23C16/46 主分类号 H01L21/205
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