| 摘要 |
A Bi-CMOS semiconductor device and method for manufacturing the same are provided. An n-well can be formed in a semiconductor substrate, and an NMOS transistor can be provided on the substrate separated from the n-well by a device isolation layer. An NPN bipolar transistor can be formed using the n-well. In particular, a collector contact region and a p-base region can be provided in the n-well. In addition, a base contact region and an emitter contact region can be disposed in the p-base region. A silicide is provided on the source and drain regions and the gate of the NMOS transistor, and the base contact region of the NPN bipolar transistor.
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