发明名称 |
Non-Volatile Memory Devices |
摘要 |
Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.
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申请公布号 |
US2009159962(A1) |
申请公布日期 |
2009.06.25 |
申请号 |
US20080338308 |
申请日期 |
2008.12.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYUN SUK;SHIM SUN-II;KANG CHANG-SEOK;JEONG WON-CHEOL;CHOI JUNG-DAL;PARK JAE-KWAN;LIM SEUNG-HYUN;KIM SUN-JUNG |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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