| 摘要 |
A semiconductor device includes a thyristor in which a first-conductivity-type first region, a second-conductivity-type second region having a conductivity type reverse to the first conductivity type, a first-conductivity-type third region, and a second-conductivity-type fourth region are sequentially arranged to form junctions. The third region is formed on a semiconductor substrate separated by an element isolation region. A gate electrode formed via a gate insulating film and side wall formed at wall side of both side of the gate electrode are provided on the third region, and the fourth region is formed so that one end thereof covers the joint portion between the other end of the third region and the element isolation regions, and so that the other end of the fourth region is joined with the sidewall on the other side.
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