发明名称 TANTALUM CARBIDE SINTERED COMPACT, METHOD FOR PRODUCING THE SAME, MOLDING DIE, AND TARGET MATERIAL
摘要 <P>PROBLEM TO BE SOLVED: To provide a tantalum carbide sintered compact having high purity, high density and high mechanical strength and suitably used as a heat resistant material forming a molding die molding glass, resin, ceramics or the like or a target material for tantalum carbide film deposition, to provide a method for producing the same, further to provide a molding die and a target material formed by the tantalum carbide sintered compact. <P>SOLUTION: The tantalum carbide sintered compact has a purity of &ge;98.5 mass%, and whose relative density as a ratio of bulk density to true density is &ge;96.5%. The tantalum carbide sintered compact is obtained by sintering tantalum carbide powder having a purity of &ge;99 mass% and a mean grain size of &le;3 &mu;m under the conditions where sintering pressure is &ge;20 MPa, sintering temperature is 1,600 to 2,300&deg;C, and sintering time is &ge;30 min in an inert gas atmosphere or in a vacuum atmosphere of &le;30 Pa. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009137789(A) 申请公布日期 2009.06.25
申请号 JP20070314850 申请日期 2007.12.05
申请人 SUMITOMO ELECTRIC IND LTD;SEI HYBRID KK 发明人 UENO TOMOYUKI;SHIBATA KENICHIRO
分类号 C04B35/56;B29C33/38;C03B11/00;C04B35/645;C23C14/34 主分类号 C04B35/56
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