发明名称 METHOD OF ETCHING SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method of etching a silicon wafer with an alkali solution, capable of improving wafer surface roughness. SOLUTION: The method of etching the silicon wafer with the alkali solution is characterized by bubbling the alkali solution with an oxidizing gas. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009141165(A) 申请公布日期 2009.06.25
申请号 JP20070316627 申请日期 2007.12.07
申请人 SILTRONIC JAPAN CORP 发明人 NISHIMURA SHIGEKI;SHINBARA TERUO
分类号 H01L21/306;C23F1/24;C30B29/06;C30B33/10;H01L21/308 主分类号 H01L21/306
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