发明名称 |
METHOD OF ETCHING SILICON WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of etching a silicon wafer with an alkali solution, capable of improving wafer surface roughness. SOLUTION: The method of etching the silicon wafer with the alkali solution is characterized by bubbling the alkali solution with an oxidizing gas. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009141165(A) |
申请公布日期 |
2009.06.25 |
申请号 |
JP20070316627 |
申请日期 |
2007.12.07 |
申请人 |
SILTRONIC JAPAN CORP |
发明人 |
NISHIMURA SHIGEKI;SHINBARA TERUO |
分类号 |
H01L21/306;C23F1/24;C30B29/06;C30B33/10;H01L21/308 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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