发明名称 MODIFYING A SURFACE IN A PRINTED TRANSISTOR PROCESS
摘要 A method of forming an electronic device includes depositing a dielectric, forming a first functional material layer having a first surface energy, depositing at least one first at least semiconductive feature of the device, forming a second functional material layer to provide a surface having a second surface energy, and depositing at least one second at least semiconductive feature of the device to connect to the first at least semiconductive feature of the device. A method of forming an electronic device includes depositing a first, dielectric material, depositing a second material, depositing at least one first at least semiconductive feature of the device on the second material, altering the second material to form a altered second material, and depositing at least one at least semiconductive feature from solution to connect the first semiconductive feature of the device. An electronic device has a substrate, a dielectric layer, a first functional layer having a first surface energy, at least one first at least semiconductive feature on the first functional layer, a second functional layer in a region between adjacent to the first at least semiconductive features, and at least one second at least semiconductive feature on the second functional layer.
申请公布号 US2009159891(A1) 申请公布日期 2009.06.25
申请号 US20070962532 申请日期 2007.12.21
申请人 PALO ALTO RESEARCH CENTER INCORPORATED 发明人 DANIEL JURGEN H.;CHABINYC MICHAEL L.;ARIAS ANA C.
分类号 H01L21/336;H01L29/786 主分类号 H01L21/336
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