| 摘要 |
Disclosed are an apparatus and a method for modeling a MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). The method includes establishing an equation and a variable that determine the driving current characteristics of the MOS transistor; generating a random number; converting the random number such that the random number has a value satisfying an equation of a rotated lozenge and determining a variation degree of the variable based on the value of the random number; and outputting the driving current distribution of the MOS transistor using the equation and the variation degree of the variable.
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