| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to prevent a lowering effect of characteristics thereof by preventing damage of a gate electrode thereof. A semiconductor device includes a first oxide layer pattern(110a), a polysilicon layer pattern(120a), a silicon epitaxial layer(140), a second oxide layer pattern(130b), and source and drain regions. The first oxide layer pattern and the polysilicon layer pattern are formed on a silicon substrate(100). The silicon epitaxial layer is formed on the silicon substrate of both sides of the first oxide layer pattern and the polysilicon layer pattern. The second oxide layer pattern is formed between the polysilicon layer pattern and the silicon epitaxial layer. The source and drain regions are formed in the silicon epitaxial layer of both sides of the polysilicon layer pattern.</p> |
