METHOD FOR FABRICATING DUAL POLY GATE IN SEMICONDUCTOR DEVICE

摘要

A method for forming a dual poly gate is provided to prevent operational delay caused by a polysilicon film at an amorphous state by decreasing damage of the polysilicon film due to high dose amount. A gate insulating film is formed on a semiconductor substrate(100) having a first region and a second region. A first conductive film is formed on the gate insulating layer(185). A first ion implantation in which a partial dose amount of total impurity ions is implanted into the first conductive film(180a) is performed. The first conductive film is crystallized by performing thermal treatment on the semiconductor substrate. A second conductive film is formed on the first conductive film. A second ion implantation in which other dose amount of total impurity ions is implanted into the second conductive film(175a) is performed. The second conductive film is crystallized by performing thermal treatment on the semiconductor substrate.