| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing the strength of a support section from decreasing and preventing the junction strength between the support section and a lower electrode from decreasing. SOLUTION: In the method of manufacturing a semiconductor device, an interlayer dielectric 103 for forming a lower electrode and an insulation film 204 for temporary support are sequentially laminated on an interlayer dielectric 101, a through-hole is formed on the interlayer dielectric 103 for forming a lower electrode and the insulation film 204 for temporary support, a lower electrode 106 is formed inside the through-hole, an opening is provided in the insulation film 204 for temporary support for exposing the interlayer dielectric 103 for forming a lower electrode and wet etching is performed via an opening with the insulation film 204 for temporary support as a temporary support for removing the interlayer dielectric 103 for forming a lower electrode, a regular support 205 is formed so that the lower electrode 106 and the temporary support are covered, the temporary support is removed, and a capacity insulation film 206 and an upper electrode 207 are successively laminated on the lower electrode 106. COPYRIGHT: (C)2009,JPO&INPIT |
