MULTILAYER FLOATING GATE NONVOLATILE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a multilayer floating gate nonvolatile memory device to secure layers with desired performance more favorably. SOLUTION: The floating gate nonvolatile memory cell has a floating gate including at least two layers (1a, 1b) constructed in different conductive or semiconductive materials. At least two of the layers of the floating gate are separated by an intermediate dielectric layer having predetermined thickness enabling direct tunnelling current between the layers. COPYRIGHT: (C)2009,JPO&INPIT