| 摘要 |
PROBLEM TO BE SOLVED: To prevent an unnecessary current from flowing to a parasitic element by adjusting voltage set to an n-type well region. SOLUTION: A method is used for driving a semiconductor apparatus. The semiconductor apparatus includes: a thyristor T in which a first region (first p-type region p1) of a first conductivity type (p type), a second region (first n-type region n1) of a second conductivity type (n type) having conductivity opposite to the first conductivity type, a third p-type region (second p-type region p2), and a fourth n-type region (second n-type region n2) are bonded successively; a gate (gate electrode 22) formed in the second p-type region p2; and an n-type well region 31 at a lower portion of the second p-type region p2. Voltage of the well region 31 when the thyristor T is turned on is set so that current flows from the well region 31 to the second n-type region n2 with the first p-type region p1 and the second n-type region n2 as an anode and a cathode, respectively. COPYRIGHT: (C)2009,JPO&INPIT
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