SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has small parasitic resistance of a source/drain region, and to provide a method of manufacturing the same. SOLUTION: The method of manufacturing the semiconductor device includes the steps of: forming a gate portion on an Si layer; introducing As into the Si layer located across the gate portion; depositing an Ni layer on the Si layer into which As is introduced; allowing the Ni layer to react with the Si layer using a heat treatment to form a first silicide layer and segregating As on the interface between the first silicide layer and Si layer; introducing Pt elements into the first silicide layer; and diffusing the Pt elements up to the Si layer by using a heat treatment to form a second silicide layer between the first silicide layer and Si layer and also segregating As on the interface of the second silicide layer and Si layer. COPYRIGHT: (C)2009,JPO&INPIT