发明名称 MONITOR WAFER AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a monitor wafer which has a flattened surface enough high in accuracy to detect micro particles and can be used as a particle monitor wafer requiring high surface flatness by comparatively many times, and to provide a method of manufacturing the monitor wafer. SOLUTION: The monitor wafer is provided with an SiC wafer formed of an SiC crystal that is formed by a CVD method and a film with non-transparency which is formed on the uppermost layer of the SiC wafer. The film with non-transparency is a polycrystalline Si film which is formed by the low-pressure vapor phase growth method. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009140985(A) 申请公布日期 2009.06.25
申请号 JP20070313155 申请日期 2007.12.04
申请人 MITSUI ENG & SHIPBUILD CO LTD;ADMAP INC 发明人 TAKEGAWA MITSUHIDE;ICHIHASHI TOYOKI;MURATA KAZUTOSHI
分类号 H01L21/205;C23C16/01;C23C16/24;C23C16/42;H01L21/02 主分类号 H01L21/205
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