发明名称 |
MONITOR WAFER AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a monitor wafer which has a flattened surface enough high in accuracy to detect micro particles and can be used as a particle monitor wafer requiring high surface flatness by comparatively many times, and to provide a method of manufacturing the monitor wafer. SOLUTION: The monitor wafer is provided with an SiC wafer formed of an SiC crystal that is formed by a CVD method and a film with non-transparency which is formed on the uppermost layer of the SiC wafer. The film with non-transparency is a polycrystalline Si film which is formed by the low-pressure vapor phase growth method. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009140985(A) |
申请公布日期 |
2009.06.25 |
申请号 |
JP20070313155 |
申请日期 |
2007.12.04 |
申请人 |
MITSUI ENG & SHIPBUILD CO LTD;ADMAP INC |
发明人 |
TAKEGAWA MITSUHIDE;ICHIHASHI TOYOKI;MURATA KAZUTOSHI |
分类号 |
H01L21/205;C23C16/01;C23C16/24;C23C16/42;H01L21/02 |
主分类号 |
H01L21/205 |
代理机构 |
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地址 |
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