New indium-tri-alkoxy-stannate(II) compounds useful as precursors for the manufacture of electrically semiconducting indium tin oxide layers

摘要

Indium-tri-alkoxy-stannate(II) compounds (A) are new. Indium-tri-alkoxy-stannate(II) compounds of formula (R-O-Sn(-O-R) 2-In) (A) are new. R : 1-20C (preferably 1-4C) alkyl group (preferably methyl, ethyl, propyl, i-propyl, n-butyl, 2-methyl-prop-1-yl, except tert-butyl) optionally substituted with T, 3-14C (preferably 3-8C) cycloalkyl group (preferably cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, 2-methylcylcohexyl or adamantyl) optionally substituted with T, 7-20C (preferably 7-14C) aralkyl group (preferably benzyl, 4-methyl-benzyl or 2-phenyl-ethyl) optionally substituted with T, or 6-20C (preferably 6-10C) aryl group (preferably phenyl, 4-tolyl or naphthyl) optionally substituted with T; and T : halo (preferably F or Cl), alkoxy (preferably methoxy) or CN. An independent claim is included for the preparation of (A).