| 摘要 |
<p>Provided is a semiconductor substrate supporting jig for supporting a semiconductor substrate at the time of performing heat treatment to the semiconductor substrate. The semiconductor substrate supporting jig is composed of at least a base material and a thin film formed on the surface of the base material. The material of the thin film is different from that for the base material. The thin film is not formed at least on a portion where the semiconductor substrate supporting jig is brought into contact with the semiconductor substrate at the time of supporting the semiconductor substrate. Thus, the semiconductor substrate supporting jig, which suppresses both Fe contamination transfer to the silicon wafer and roughening of the silicon wafer rear surface at the time of performing heat treatment wherein argon or the like is used, is provided. A method for manufacturing such semiconductor substrate supporting jig is also provided.</p> |
