| 摘要 |
A plasma processing apparatus is provided to selectively use a high voltage or a low voltage by varying a frequency of a power source supplied for plasma generation. A plasma processing apparatus(100) includes a chamber(110), a top electrode(130), and a bottom electrode(140). The top electrode and the bottom electrode are installed in an inner part of the chamber. A matching box(120) is installed on a top part of the chamber. A power supply unit supplies a power source to the top electrode through the matching box. The power supply unit includes a first RF power supply unit(151) and a second RF power supply unit(152). The first RF power supply unit supplies a power source having a frequency of 13.56MHz or 27.12MHz. The second RF power supply unit supplies a power source having a frequency lower than the frequency of the power source supplied in the first RF power supply unit. A switch(160) selectively supplies the power source supplied in the first RF power supply unit and the second RF power supply unit to the top electrode. |
