| 摘要 |
<p>A semiconductor device is provided to form uniformly a photoresist layer by improving coating uniformity of a BARC(Bottom-Anti-Reflect-Coating) layer through a dummy pattern insertion process. A semiconductor device includes a substrate, a semiconductor device layer, and a metal line layer. The semiconductor device layer is formed on an upper surface of the substrate. The semiconductor device layer includes a plurality of wiring circuit patterns. A plurality of dummy patterns(100) are formed on a region on which the wiring circuit patterns are not formed. The dummy patterns are arranged in a matrix structure. The dummy patterns are inserted to improve coating uniformity of a BARC layer. An upper metal line layer is formed on the semiconductor device layer.</p> |
