| 摘要 |
<p>A non-volatile memory device and a forming method thereof are provided to distribute uniformly electrons in a charge storage layer by reducing the amount of electrons accumulated in the edge of the charge storage layer. A non-volatile memory device includes an isolation layer(118), a first insulating layer(121), a charge storage layer(123) and a second insulating layer(125), a resistance pattern(132), and a conductive line(142). The isolation layer is formed to define active regions(115) on a substrate(110). The first insulating layer, the charge storage layer, and the second insulating layer are sequentially arranged on the active areas. The resistance pattern of the isolation layer is arranged between the active regions. The conductive line crosses a second insulating layer pattern and the active regions on the resistance pattern.</p> |
