| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a material for implantation, inhibiting the differentiation from precursor osteoclast to osteoclast and hardly causing its own deterioration even in case a large load is applied thereon. <P>SOLUTION: The material for implantation includes a base material and a carbonaceous thin film formed on the surface of the base material and containing silicon. In this material for implantation, the carbonaceous thin film includes a C-C component where carbon atoms are bound to each other and an SiC component where a carbon atom and a silicon atom are bound to each other, wherein the ratio of the SiC component is 0.06 or greater. <P>COPYRIGHT: (C)2009,JPO&INPIT |
