| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of attaining high light emitting efficiency and high integration, by enhancing a degree of freedom of design of a base part for forming a light emitting part. SOLUTION: This semiconductor light emitting device has a backing layer 12 covering a surface of a projection part 1 formed on a main surface being a ä100} surface of a substrate 10, a light emitting part 20 formed on a top surface of the backing layer 12, and an electric current blocking layer 40 formed above the other part of the main surface of the substrate 10 and covering at least a side surface of an active layer 23 constituting the light emitting part 20. The backing layer 12 is composed of a second III-V group compound semiconductor material different from a first III-V group compound semiconductor material for constituting the projection part 1. A cross-sectional shape of a backing layer surface when cutting a part of the backing layer 12 covering the projection part 11 by a virtual plane vertical to the <110> direction of the substrate 10, constitutes a part of a trapezoid. An inclined face of the backing layer corresponding to two oblique lines of the trapezoid is a ä111} B surface, and a top surface of the backing layer corresponding to the upper side of the trapezoid is the ä100} surface. COPYRIGHT: (C)2009,JPO&INPIT
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