| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a p-type MISFET (metal insulator semiconductor field effect transistor) and an n-type MISFET having respectively the optimal gate insulating film and gate electrode while not generating poly silicon film residue which becomes the cause of failure. SOLUTION: The semiconductor device includes a first gate insulating film 13A formed on the first region 10A of a semiconductor substrate 10, a first gate electrode 14A formed on the first gate insulating film 13A, a second gate insulating film 13B formed on the second region 10B of the semiconductor substrate 10 and a second gate electrode 14B formed on the second gate insulating film 13B. The first gate insulating film 13A includes a first insulating film consisting of a first material including a first metal while a second gate insulating film 13B includes a second insulating film, in which a first material and a second material including a second metal are mixed. COPYRIGHT: (C)2009,JPO&INPIT
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