| 摘要 |
PROBLEM TO BE SOLVED: To provide a metallic pattern forming method capable of suppressing both the side etching and the over-etching. SOLUTION: A metallic film 2 is deposited on a substrate 1, and a mask 3 for covering a part of the metallic film 2 is formed on the metallic film 2. A part of the metallic film 2 exposed from the mask 3 is partially etched in the thickness direction by anisotoropic etching, thereby forming side walls, covered with re-deposited films 4 with the anisotoropic etching, on the metallic film 2. A part of the metallic film 2m with the side wall, exposed from the mask 3, and the re-deposited film 4 are etched by isotropic etching under an etching condition that the etching speed in the material of the metallic film 2m is higher than that in the material of the substrate 1. Thus, the metallic pattern 2p is formed. COPYRIGHT: (C)2009,JPO&INPIT
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