| 摘要 |
PROBLEM TO BE SOLVED: To prevent the damage of a substrate silicon in an opening of an embedded insulating film of an SOI structure and prevent the reduction of contact area with the substrate in the opening of the embedded insulating film. SOLUTION: A semiconductor device, which has SOI structure, is provided with: a silicon substrate 10; an insulating film 11 which is provided on the silicon substrate 10 and has an opening 12 in a part thereof, wherein an upper part of the opening 12 is formed to forward tapered shape structure, in which an upper surface side spread, and a lower part is formed to inverse tapered shape structure, in which a lower surface side spread; a single-crystal silicon layer 14 which is formed on the insulating film 11 and within the opening 12; and a semiconductor device which is formed in the single-crystal silicon layer 14. COPYRIGHT: (C)2009,JPO&INPIT
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