| 摘要 |
A complementary metal oxide silicon (CMOS) image sensor and a method for fabricating the same. In one example embodiment, a CMOS image sensor includes a substrate, a first dielectric film, a plurality of metal patterns, a second dielectric film, a plurality of via holes, a plurality of metal wires, a plurality of silicon oxide films, a plurality of trenches, and a plurality of photo diodes. The first dielectric film is formed on the substrate. The metal patterns are formed on the first dielectric film. The second dielectric film is formed on the first dielectric film and on the metal patterns. The via holes are formed through the second dielectric film. The metal wires are each formed in one of the via holes. The silicon oxide films are formed on the second dielectric film. The trenches are formed between the silicon oxide films. The photo diodes are formed in the trenches.
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