Capacitor for Semiconductor Device and Method of Manufacturing the Same

摘要

Provided is a capacitor for a semiconductor device. The capacitor comprises a bottom electrode, a dielectric pattern, and a top electrode. The bottom electrode has an uneven surface. The dielectric pattern is on the bottom electrode, and the top electrode is on the dielectric pattern. The bottom electrode has a first height in edge and center regions thereof, and a protrusion between the edge region and the center region of the bottom electrode having a second height greater than the first height.