| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which can reduce a leak current in a row decoder, and is advantageous to prevent the erroneous deletion of a memory cell. <P>SOLUTION: The nonvolatile semiconductor storage device is provided with: a memory cell array which is composed of a plurality of blocks; and a row decoder 22 which is provided with first and second block selecting circuits RDn and RDn+3 which has a plurality of transfer transistors, in which ends of current paths are electrically connected to a plurality of the word lines, respectively, and are provided corresponding to a plurality of the blocks and are arranged adjacent to the direction of the word lines. Diffusion layers S which are ends of current paths of the transfer transistors are arranged so as to oppose each other in the first and second block selecting circuits, respectively. The width W2 between the diffusion layers adjacent to the first and second block selecting circuits in the direction of the word lines is arranged more greatly than the width W1 between the diffusion layers adjacent to the identical first and second block selecting circuits in the direction of the word lines (W2>W1). <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
