发明名称 SURFACE EMITTING LASER, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a surface emitting laser that can reduce coupling loss with a waveguide, operate at high speed, and accurately monitor optical output, and to provide a semiconductor device equipped with the surface emitting laser. SOLUTION: A vertical resonator is provided on a substrate 101, and the vertical resonator includes a first reflective layer 102 on the substrate 101, an active layer 104 provided on the first reflective layer 102, a current confinement structure provided over the active layer 104, and a second reflective layer 109 provided over the current confinement structure. Assuming a first axis 116 and a second axis 117 which are orthogonal to each other in a plane passing the current confinement structure and parallel to each of the layers, a light emission profile in the direction of the first axis 116 and a light emission profile in the direction of the second axis 117 are different. A radiation angle in the direction of the first axis 116 is narrower than a radiation angle in the direction of the second axis 117, and the surface emitting laser has a far-field image having double humps in the direction of the second axis 117. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009141119(A) 申请公布日期 2009.06.25
申请号 JP20070315883 申请日期 2007.12.06
申请人 NEC CORP 发明人 YASHIKI KENICHIRO;TSUJI MASAYOSHI;ANAMI TAKAYOSHI;SUZUKI TAKAFUMI;HATAKEYAMA MASARU;FUKATSU MASAYOSHI;AKAGAWA TAKESHI
分类号 H01S5/183;H01S5/343 主分类号 H01S5/183
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