| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device applied to a quantum dot laser element capable of improving a temperature characteristic. SOLUTION: The quantum dot (14Q) including In and As is formed on a semiconductor substrate (11). A barrier layer (14B) comprising a compound semiconductor including Al as group III element so as to cover the quantum dot and having electron affinity smaller than that of the quantum dot is formed by organic metal chemical vapor growth by the use of triethylaluminum as an Al raw material. COPYRIGHT: (C)2009,JPO&INPIT
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