| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride laser element improved in life by relaxing stress caused by an electron blocking layer while reducing threshold current density by a structure arranged the electron blocking layer including an Al layer between a p-type guide layer and a p type clad layer. SOLUTION: The semiconductor laser diode 70 includes a substrate 1 and a group III nitride semiconductor stacked layer structure 2 formed on the substrate 1. The group III nitride semiconductor stacked layer structure 2 is formed by stacking an n-type semiconductor layer 11, a light emitting layer 10, and a p-type semiconductor layer 12. The p-type semiconductor layer 12 includes a p-type guide layer 16, a p-type AlGaN electron blocking layer 17 and a p-type AlGaN clad layer 18. The p-type guide layer 16 has a super lattice structure wherein a p-type AlGaN layer and p-type GaN layer are alternatively repeatedly stacked a plurality of times. COPYRIGHT: (C)2009,JPO&INPIT
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