| 摘要 |
Embodiments relate to a semiconductor device and a method for manufacturing a semiconductor device. According to embodiments, a method may include forming a metal layer on and/or over a lower structure formed on and/or over a semiconductor substrate, forming neighboring metal lines by patterning the metal layer by a photolithography process, forming an insulating layer on and/or over a surface of the lower structure and forming a void between the metal lines, and performing heat treatment to the metal lines and the insulating layer having the void. According to embodiments, a void may be used as a buffer against expansion of the metal lines in sintering due to a difference in a thermal expansion coefficient. This may prevent a blister phenomenon that may separate an insulating film from metal lines.
|
