发明名称 |
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LASER |
摘要 |
The invention provides a high-reliability nitride semiconductor laser that reduces the stress of a nitride dielectric film formed on a resonator's end face, thus reducing possible damage to the resonator's end face, which may occur during the formation of the nitride dielectric film. A method of manufacturing a nitride semiconductor laser according to the invention uses a nitride-based III-V compound semiconductor and includes the steps of (a) forming an adherence layer of a nitride dielectric on both a light-emitting and a light-reflecting end face of a resonator in plasma containing a nitrogen gas; and (b) forming a low-reflective and a high-reflective face-coating film of a dielectric on the adherence layers.
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申请公布号 |
US2009162962(A1) |
申请公布日期 |
2009.06.25 |
申请号 |
US20080325354 |
申请日期 |
2008.12.01 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
SUZUKI YOSUKE;NAKAGAWA YASUYUKI;KURAMOTO KYOSUKE;SHIRAHAMA TAKEO |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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