发明名称 |
Nitride semiconductor light emitting device and manufacturing method of the same |
摘要 |
There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.
|
申请公布号 |
US2009159920(A1) |
申请公布日期 |
2009.06.25 |
申请号 |
US20080216568 |
申请日期 |
2008.07.08 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO. LTD. |
发明人 |
KIM HYUN SOO;KWAK JOON SEOP;KANG KI MAN;LEE JIN HYUN;SONE CHEOL SOO;KIM YU SEUNG |
分类号 |
H01L33/00;H01L33/32;H01L33/40;H01L33/42 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|