| 摘要 |
<p>Disclosed is a nitride semiconductor light-emitting device which is prevented from life shortening due to increase in driving voltage of the device or internal heat generation, thereby having uniform laser characteristics, even when the device has a ridge stripe structure. Specifically, an n-type GaN layer (2), an n-type AlGaN layer (3), an active layer (4), a p-type AlGaN layer (5), and a p-type GaN layer (6) are sequentially arranged on a GaN substrate (1). An insulating film (7) and a transparent electrode (8) are formed on the p-type GaN layer (6). A part of the transparent electrode (8) is so formed as to be in contact with the p-type GaN layer (6). A ridge stripe portion (D) for forming a waveguide is composed of a transparent film (9). The region in contact with the transparent electrode (8) and the p-type GaN layer (6) serves as a stripe current injection region.</p> |
