| 摘要 |
<p>A mesa-type semiconductor device and a manufacturing method thereof are provided to reduce a manufacturing cost and to prevent contamination and physical damage thereof. A mesa-type semiconductor device includes a semiconductor substrate(10), a first insulating layer(23), an electrode, a mesa groove(26), and a second insulating layer(27). The semiconductor substrate includes a first conductive type first semiconductor layer, a second conductive type second semiconductor layer, and a PN junction part(JC). The first insulating layer is formed to cover partially a surface of the second semiconductor layer. The first insulating layer has an opening for exposing a surface of the semiconductor layer. The electrode comes in contact with the surface of the second semiconductor layer through the opening. The mesa groove is formed to surround the electrode. The mesa groove has the predetermined depth from the surface of the second semiconductor layer. The second insulating layer is formed to cover the mesa groove, the first insulating layer, and an end of the electrode.</p> |
