| 摘要 |
<p>A method for manufacturing a flash memory device is provided to improve characteristic of the flash memory device by allowing a high-k dielectric film to be etched easily. A tunnel insulating film(210) is formed on a semiconductor substrate(200). A floating gate having a positive slope is formed on the tunnel insulating film. An inter-gate insulating film(250) containing a high-k material film is formed on an entire surface of a resultant structure on which the floating gate is formed. A conductive film for a control gate(260) is formed on the inter-gate insulating film. A gate stack is formed by patterning the conductive film for the control gate, the inter-gate insulating film, the floating gate and the tunnel insulating film.</p> |
