| 摘要 |
<p>A method for manufacturing a non-volatile memory device is provided to prevent damage in an electric charge trapping layer due to plasma charge during a patterning process of an aluminum oxide film and allow the aluminum oxide film to have a vertical slope by etching. A tunneling layer(210), an electric charge trapping layer(220), a shielding layer(230) and a control gate electrode(240) are sequentially formed on a semiconductor substrate(200). A hard mask pattern(250) is formed on the control gate electrode and the gate control electrode is patterned. The shielding layer is etched by using plasma-assisted atom source. A gate stack is formed by patterning the electric charge trapping layer and the tunneling layer.</p> |
