| 摘要 |
<p>A semiconductor device is provided to reduce largely a size thereof and to obtain a high degree of integration thereof by eliminating an implant layer. A semiconductor device(100) includes a substrate(150), source/drain conductors(140), a first gate conductor(130), and a second gate conductor(120). The source/drain conductors are formed with metal lines on the substrate. The first gate conductor is formed with the metal line. The first gate conductor is formed adjacent to one side of the source/drain conductors. The second gate conductor is formed with the metal line. The second gate conductor is formed adjacent to one side of the source/drain conductors. The second gate conductor is separated from the first gate conductor.</p> |
