METHOD FOR FORMING PATTERN IN SEMICONDUCTOR DEVICE

摘要

A method for forming a pattern of a semiconductor device is provided to minimize a CD(Critical Dimension) difference of a pattern formed in a high pattern density region and a low pattern density region. A mask pattern(14) is formed on an etch target layer. The pattern density of the first region is higher than the pattern density of the second region. A polymer layer is formed on the entire surface of the resultant. The polymer layer formed on the sidewall of the mask pattern is thinner than the polymer layer formed on the upper part of the mask pattern. The polymer layer and the lateral surface of the mask pattern are etched by performing an isotropic etch process. An etching target layer is etched by using the etched mask pattern as an etch barrier.